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| Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier Key Features * * * * * * TGA4516 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI MMW pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in Military Radar Systems Ka-Band Sat-Com Point to Point Radio Primary Applications * * * Product Description The TriQuint TGA4516 is a High Power MMIC Amplifier for Ka-band applications. The part is designed using TriQuint's 0.15um power pHEMT process. The small chip size is achieved by utilizing TriQuint's 3 metal layer interconnect (3MI) design technology that allows compaction of the design over competing products. The TGA4516 provides >33 dBm saturated output power, and has typical gain of 18 dB at a bias of 6V and 1050mA (Idq). The current rises to 1.9A under RF drive. This HPA is ideally suited for many applications such as Military Radar Systems, Ka-band Sat-Com, and Point-to-Point Radios. The TGA4516 is 100% DC and RF tested on-wafer to ensure performance compliance. Preliminary Fixtured Data VD = 6V, ID = 1050mA 25 20 15 10 S-Parameters (dB) 5 0 -5 -10 -15 -20 -25 -30 -35 30 32 34 36 38 40 Frequency (GHz) S22 S11 S21 Pout @ Pin =20dBm 35 34 Pout (dBm) 33 32 31 30 30 32 34 36 38 40 Frequency (GHz) Note: This Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 1 Advance Product Information December 2, 2004 TGA4516 TABLE I MAXIMUM RATINGS 1/ SYMBOL V V + - PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V -5 TO 0 V 3A 85 mA 267 mW 7.8 W 150 C 320 C -65 to 150 oC o o NOTES 2/ I+ I G P IN PD T CH TM TS T G 1/ 2/ 3/ 4/ 5/ 2/ 3/ 3/ 2/ 4/ 5/ 6/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed P D . Total current for the entire MMIC. When operated at this bias condition with a base plate temperature of 70 oC, the median life is 1E6 hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 6/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2 Advance Product Information December 2, 2004 TGA4516 TABLE II DC PROBE TESTS (Ta = 25 OC, Nominal) SYMBOL IDSS,Q1 VBVGS,Q1 VBVGD,Q1-Q6 VP,Q1-Q6 PARAMETER Saturated Drain Current Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Pinch_off Voltage MIN. 80 -18 -18 -1.5 MAX. 240 -8 -11 -0.5 UNITS mA V V V Q1- Q4 are 400 um FETs, Q5 is 2560 um FET, Q6 is 4160 um FET TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 OC, Nominal) PARAMETER Drain Operating Quiescent Current Frequency Range Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Power @ saturated, Psat TYPICAL 6 1050 30 - 40 18 10 7 33 UNITS V mA GHz dB dB dB dBm TABLE IV THERMAL INFORMATION Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 6 V Id = 1700 mA Freq = 35 GHz Pdiss = 7.8 W (oC) 150 Tch RJC (oC/W) 10.2 TM (HRS) 1E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 10.6 W with 2.3 W RF power delivered to load. Power dissipated is 8.2 W and the temperature rise in the channel is 84 C. Baseplate temperature must be reduced to 66 C to remain below the 150 C maximum channel temperature. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 3 Advance Product Information December 2, 2004 TGA4516 Fixtured Performance 25 20 15 10 S21 Vds=6V, Idq=1050mA S-Parameters (dB) 5 0 -5 -10 -15 -20 -25 -30 -35 -40 28 30 32 34 36 38 40 42 S11 S22 Frequency (GHz) TGA4516 Pout @ Pin =20dBm Vds=6V, Idq=1050mA 35 34 33 32 Pout (dBm) 31 30 29 28 27 26 25 28 30 32 34 36 38 40 42 Frequency (GHz) Pin=20dBm TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 4 Advance Product Information December 2, 2004 TGA4516 Fixtured Performance TGA4516 Pout vs. Pin freq=35GHz, Vds=6V, Idq=1050mA 40 30 35 Pout Large Signal Gain 25 30 Pout (dBm) 20 Gain (dB) IDS (mA) 25 15 20 10 15 5 10 -10 -5 0 5 10 15 20 25 Pin (dBm) 0 TGA4516 Ids vs. Pin freq=35GHz, Vds=6V, Idq=1050mA 40 35 30 25 20 15 10 -10 -5 0 5 10 15 20 25 Pin (dBm) Pout Ids 2000 2200 1800 Pout (dBm) 1600 1400 1200 1000 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 5 Advance Product Information December 2, 2004 TGA4516 Mechanical Drawing Units: Millimeters [inches] Thickness: 0.100 [0.004] (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chipsize: 2.79 x 2.315 [0.110 x 0.091] +/- 0.51 [0.002] RF Ground is backside of MMIC Bond pad #1 Bond pad #2 Bond pad #3 Bond pad #4 Bond pad #5 Bond pad #6 Bond pad #7 Bond pad #8 Bond pad #9 Bond pad #10 (RF Input) (Vg2) (Vd12) (Vg3) (Vd3) (RF Output) (Vd3) (Vg3) (Vd12) (Vg2) 0.100 x 0.200 0.100 x 0.100 0.100 x 0.200 0.100 x 0.100 0.100 x 0.100 0.100 x 0.200 0.100 x 0.200 0.100 x 0.100 0.100 x 0.200 0.100 x 0.100 [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.004] [0.004 x 0.008] [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.008] [0.004 x 0.004] GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 6 Advance Product Information December 2, 2004 TGA4516 Chip Assembly Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 7 Advance Product Information December 2, 2004 TGA4516 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 8 |
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